TOKYO, December 2, 2025 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch new standard-isolation (6.0kVrms) and high-isolation (10.2kVrms) modules in its 4.5kV/1,200A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs) on December 9. These new high-capacity power semiconductors achieve high moisture resistance for more efficient and reliable inverters used in large industrial equipment, such as railcars, operating in diverse environments including outdoors. Mitsubishi Electric will exhibit the new modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, as well as other exhibitions in North America, Europe, China, India and additional locations.

The new modules use IGBT elements that incorporate Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT¹) structure. New structures for electric field relaxation² and surface charge control³ enabled Mitsubishi Electric to reduce the chip’s termination region size by about 30% while also achieving about 20 times⁴ greater moisture resistance than existing products. In addition, the module reduces total switching loss by approximately 5%⁵ compared to previous models, and reverse-recovery safe-operating area (RRSOA) tolerance is about 2.5 times⁶ greater than that of compared to previous models.

As a result of improving the efficiency and reliability of inverters in large industrial equipment operating in environments where conditions can vary, such as outdoors, the modules will contribute to carbon neutrality.