FOR IMMEDIATE RELEASE No. 3445
TOKYO, October 21, 2021 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its 100Gbps (53Gbaud) four-level pulse-amplitude modulation (PAM4) electro-absorption modulator (EML) laser diode chip for coarse wavelength division multiplexing (CWDM) on November 1. The semiconductor diode is expected to be applied in sets of four EML chips as a light source in optical transceivers for 400Gbps optical fiber communication in data centers. Thanks to the new EML's operability in a wider range of temperatures, it will help to lower the power consumption and costs of optical transceivers by eliminating the need for conventional temperature-control units.
|Wider-temperature-range CWDM 100Gbps
(53Gbaud PAM4) EML chip
1311 and 1331 nm
|5 to 85°C
|November 1, 2021
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